For capsule devices

文件：436.09 Kbytes 页数：3 Pages

Semikron

赛米控丹佛斯

P cores and accessories

文件：104.13 Kbytes 页数：10 Pages

FERROXCUBE

丝印：P18；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free Green Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：349.06 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：P18；Package：DFN1006-2；1-Line Bi-directional TVS Diode

文件：714 Kbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：P18；Package：DFN3030-8B；N-Channel 40-V (D-S) MOSFET

文件：260.56 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：P18；Package：DFN3333-8A；N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.

文件：2.6105 Mbytes 页数：3 Pages

LRC

乐山无线电

丝印：P18；Package：DFN3030-8B；N-Channel 40-V (D-S) MOSFET

文件：260.51 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：P1800EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P1800EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P1800EC；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82987 Mbytes 页数：6 Pages

UNSEMI

优恩半导体