Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

文件：121.79 Kbytes 页数：3 Pages

JINGDAO

晶导

高反压集成二极管系列（Bvceo：400-600V）

JDsemi

深圳晶导

NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. Features and benefits • High typical DC current gain • Fast switching • High voltage capability • Integrate

文件：438.34 Kbytes 页数：13 Pages

WEEN

瑞能半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

文件：49.87 Kbytes 页数：7 Pages

PHI

飞利浦