丝印：P12；Package：SOT563；PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDC) - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：282.89 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：P12；Package：SOT23；PNP PRE-BIASED TRANSISTOR IN SOT23

Features • Epitaxial Planar Die Construction • Complementary NPN Types Available (DDTC) • Built-In Biasing Resistors, R1 only • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change

文件：307.53 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：P12；Package：SOT523；PNP PRE-BIASED TRANSISTOR IN SOT523

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1 only - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change

文件：751.22 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：P12；Package：SOT323；PNP PRE-BIASED TRANSISTOR IN SOT323

Features - Epitaxial Planar Die Construction - Complementary NPN Types Available (DDTC) - Built-In Biasing Resistors, R1only - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change

文件：926.79 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：P12；Package：DFN2020-6S；12V P-Channel Enhancement MOSFET

文件：399.24 Kbytes 页数：6 Pages

LRC

乐山无线电

丝印：P12；Package：SOT23LC；12V P-Channel Enhancement MOSFET

文件：819.38 Kbytes 页数：6 Pages

LRC

乐山无线电

丝印：P12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

丝印：P1202Q；Package：SOT-23-THN；TPLD1202-Q1 Automotive Programmable Logic Device with I2C/SPI and 10-GPIO

1 Features • Operating characteristics – Extended temperature range: -40°C to 125°C – Wide supply voltage range: 1.71V to 5.5V – Qualified for automotive applications • Configurable macro-cells – 2-, 3-, and 4-bit lookup tables – D-type flip-flops and latches with and without reset/set opt

文件：1.26357 Mbytes 页数：15 Pages

TI

德州仪器

丝印：P120BK；Package：HSMT8AG；Nch 100V 12A Power MOSFET

Features 1) Small high-powered package reduces mounting area by 64% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) AEC-Q101 Qualified Application ADAS/Info./Lighting/Body

文件：2.7309 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：P12NM50；Package：TO-220；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：115.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体