首页 >OXUF9240SB-FBAG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.5ohm,Id=-11A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFETTRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-st | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFET FEATURES •P–CHANNELPOWERMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES | SEME-LAB Seme LAB | SEME-LAB | ||
-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET -9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFET FEATURES •P–CHANNELPOWERMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETTHRU-HOLE(TO-254AA) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-11A) RDS(on)0.51Ω ID-11A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-12A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
12A,200V,0.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •ImprovedInductiveruggedness •Fastswitchingtimes •Ruggedpolysllicongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
22++ |
BGA |
4280 |
原装正品优势渠道!实单特价! |
询价 | ||
TI/德州仪器 |
23+ |
BGA |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
2250 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
TI/德州仪器 |
23+ |
BGA |
9920 |
原装正品，支持实单 |
询价 | ||
TI/德州仪器 |
21+ |
NA |
500 |
进口原装现货假一赔万力挺实单 |
询价 | ||
TI/德州仪器 |
22+ |
6800 |
十年沉淀唯有原装 |
询价 | |||
OXFORD |
22+ |
BGA |
2679 |
原装优势!绝对公司现货!可长期供货! |
询价 | ||
OXFORD |
23+ |
BGA |
5500 |
现货,全新原装 |
询价 | ||
OXFORD |
2006 |
BGA |
17 |
询价 | |||
OXFORD |
16+ |
BGA |
4000 |
进口原装现货/价格优势! |
询价 |
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