Disconnect switches Non-fusible Fusible

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Silicon N Channel IGBT High Speed Power Switching

Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode in one package ● Trench gate and thin wafer technology ● High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg =

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