首页 >OSG60R099KSZF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
CoolMOSPowerTransistor Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
Highpeakcurrentcapability Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSTMPowerTransistor Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •WorldwidebestRds,oninTO262 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •WorldwidebestRds,oninTO220 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东微 |
23+ |
TO-263 |
112800 |
公司现货库存,有挂就有货,支持实单 |
询价 | ||
ORIENTAL SEMI(东微) |
20+ |
TO-263 |
800 |
询价 | |||
Oriental/东微 |
22+ |
NA |
2400 |
B原装正品现货N |
询价 | ||
Oriental |
22+ |
原厂封装 |
800 |
百分百原装现货 |
询价 | ||
ORIENTAL SEMI/东微 |
24+ |
TO-263 |
12500 |
东微全系列在售 |
询价 | ||
东微 |
22+ |
TO-247 |
19800 |
原厂原装,价格优势!13246658303 |
询价 | ||
ORIENTALSEMI |
22+ |
TO247 |
30000 |
只做原装 |
询价 | ||
ORIENTAL SEMI(东微) |
23+ |
TO263 |
6000 |
询价 | |||
ORIENTAL SEMI/东微 |
TO-220F |
52628 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ORIENTAL SEMI/东微 |
22+ |
TO-220F |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 |
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