BFP196

NPNSiliconRFTransistor(Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunications)

•Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz

BFP196

NPNSiliconRFTransistor

NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp

BFP196W

NPNSiliconRFTransistor(Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunications)

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz

BFP196W

NPNSiliconRFTransistor

NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp

BFP196W

LowNoiseSiliconBipolarRFTransistor

BFP196W

NPNSiliconRFTransistor

BFP196W

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz •HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz •MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS •Designedforuseinlownoise

BFP196WN

LownoisesiliconbipolarRFtransistor

Productdescription •NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm

BFY196

HiRelNPNSiliconRFTransistor

BFY196

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5

BFY196

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainamplifiersupto2GHz.)

Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=3dBat2GHz •ESAQualificationpending

BFY196H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5

BFY196P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5

BFY196S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5

CGY196

GaAsMMIC(BroadbandPowerAmplifier[800..3500Mhz]DECT,PHS,PCS,GSM,AMPS,WLAN,WLLSingleVoltageSupply)

GaAsMMIC ●BroadbandPowerAmplifier[800..3500Mhz] ●DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ●SingleVoltageSupply ●Operatingvoltagerange:2.0to6V ●Pout=25.5dBmatVd=2.4V ●Pout=27.0dBmatVd=3.0V ●Pout=30.0dBmatVd=5.0V ●Overallpoweraddedefficiencyupto50 ●Easyexter

CL-196

ULTRASMALLCHIPLEDSFORUSEINVARIOUSELECTRONICPRODUCTS

CL-196

Mono-ColorUpward-LightingType

Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors.

CL-196D

Mono-ColorUpward-LightingType

Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors.

CL-196D

Mono-ColorUpward-LightingType

CL-196D-CD-T

Featuringworld-classproductvariationsandeaseofSMDassembly.Ultra-smallChip-LEDsforuseinvariouselectronicproducts.

1.AllareSMD(surfacemountdevice)LEDlamps. 2.Varietiesrangefromthestandardtoverysmalland ultra-smallsizesandhighdensitymountingis available. 3.Therearestandardbrightnesstype,superbrightness typeandultrabrightnesstype. 4.Automatedchipmachinemountingallowsf