丝印：O4140A；Package：TSSOP(PW)；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：3.02523 Mbytes 页数：56 Pages

TI

德州仪器

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged

文件：76.82 Kbytes 页数：12 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

40 V low VCEsat NPN/PNP transistor

FEATURES •600 mW total power dissipation •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replaces two SOT23 packaged low VCEsat transistors on same PCB area •Reduces required PCB area •Reduced pick and place cos

文件：585.6 Kbytes 页数：12 Pages

NEXPERIA

安世