Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

文件：337.17 Kbytes 页数：16 Pages

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亚德诺

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

文件：337.17 Kbytes 页数：16 Pages

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亚德诺

Micropower RRIO Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

文件：2.37357 Mbytes 页数：19 Pages

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亚德诺