Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

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亚德诺

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

文件：2.37311 Mbytes 页数：19 Pages

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Micropower, Rail-to-Rail Input and Output Operational Amplifiers

文件：287.5 Kbytes 页数：16 Pages

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MicroConverter짰 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU

文件：908.68 Kbytes 页数：88 Pages

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微功耗RRIO双通道运算放大器

OP196系列CBCMOS运算放大器具有微功耗特性和轨到轨输入/输出范围。\n\n 这些放大器的电源要求极低，保证工作电压范围为+3 V至+12 V，因而非常适合监控电池使用情况和控制电池充电。良好的动态性能，包括26 nV/√z电压噪声密度，则适合电池供电音频应用。这些器件可以处理最高200 pF的容性负载而不会发生振荡。\n\n OP196/OP296/OP496的额定温度范围为-40°C至+125°C HOT扩展工业温度范围。以+3 V电压工作时，额定温度范围为0°C至+125°C。单通道OP196和双通道OP296提供8引脚塑封DIP和SO-8表贴两种封装。四通道O • 轨到轨输入和输出摆幅\n\n• 低功耗：每个放大器60 µA\n\n• 增益带宽积：450 kHz\n\n• 单电源供电：3 V至12 V\n\n• 低失调电压：300 µV（最大值）\n\n• 高开环增益：500 V/mV\n\n• 单位增益稳定\n\n• 无反相;

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GaAs plastic infrared emitting diode

TT Electronics

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

文件：343.42 Kbytes 页数：8 Pages

OPTEK

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

文件：1.12482 Mbytes 页数：9 Pages

TTELEC