零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NPNSiliconRFTransistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunications) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz •HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz •MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS •Designedforuseinlownoise | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LownoisesiliconbipolarRFtransistor Productdescription •NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainamplifiersupto2GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=3dBat2GHz •ESAQualificationpending | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
GaAsMMIC(BroadbandPowerAmplifier[800..3500Mhz]DECT,PHS,PCS,GSM,AMPS,WLAN,WLLSingleVoltageSupply) GaAsMMIC ●BroadbandPowerAmplifier[800..3500Mhz] ●DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ●SingleVoltageSupply ●Operatingvoltagerange:2.0to6V ●Pout=25.5dBmatVd=2.4V ●Pout=27.0dBmatVd=3.0V ●Pout=30.0dBmatVd=5.0V ●Overallpoweraddedefficiencyupto50 ●Easyexter | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
Mono-ColorUpward-LightingType Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors. | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
ULTRASMALLCHIPLEDSFORUSEINVARIOUSELECTRONICPRODUCTS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Mono-ColorUpward-LightingType Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors. | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Mono-ColorUpward-LightingType | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Featuringworld-classproductvariationsandeaseofSMDassembly.Ultra-smallChip-LEDsforuseinvariouselectronicproducts. 1.AllareSMD(surfacemountdevice)LEDlamps. 2.Varietiesrangefromthestandardtoverysmalland ultra-smallsizesandhighdensitymountingis available. 3.Therearestandardbrightnesstype,superbrightness typeandultrabrightnesstype. 4.Automatedchipmachinemountingallowsf | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
Featuringworld-classproductvariationsandeaseofSMDassembly.Ultra-smallChip-LEDsforuseinvariouselectronicproducts. 1.AllareSMD(surfacemountdevice)LEDlamps. 2.Varietiesrangefromthestandardtoverysmalland ultra-smallsizesandhighdensitymountingis available. 3.Therearestandardbrightnesstype,superbrightness typeandultrabrightnesstype. 4.Automatedchipmachinemountingallowsf | CITIZEN Citizen Electronics Co., Ltd | CITIZEN |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AD专营优势 |
22+ |
78900 |
询价15919799957 |
询价 | |||
亚德诺 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
ADI/亚德诺 |
1901+ |
DIP8 |
3625 |
原装现货 |
询价 | ||
ADI/亚德诺 |
21+ |
原封装 |
13880 |
公司只售原装,支持实单 |
询价 | ||
ADI/亚德诺 |
DIP8 |
48382 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ADI/亚德诺 |
原封装 |
66900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ADI/亚德诺 |
22+ |
66900 |
原封装 |
询价 | |||
AD |
22+ |
SOP8 |
800 |
大量原装现货,特价甩卖! |
询价 | ||
ADI |
01+ |
SOP8 |
138 |
询价 | |||
AD |
23+ |
SOP-8 |
9827 |
询价 |
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