丝印：NXPSC10650；Package：TO-220AC；Silicon Carbide Diode

文件：160.72 Kbytes 页数：9 Pages

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瑞能半导体

Silicon Carbide diodes

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies. • Highly stable switching performance\n• High forward surge capability IFSM\n• Extremely fast reverse recovery time\n• Superior in efficiency to Silicon Diode alternatives\n• Reduced losses in associated MOSFET\n• Reduced EMI\n• Reduced cooling requirements\n• RoHS compliant;

WeEn

瑞能半导体

SiC Diode

DESCRIPTION · High forward surge capability IFSM · Extremely fast reverse recovery time · Reduced losses APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Motor Drives · LED / OLED TV

文件：268.39 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Carbide Diode

文件：159.68 Kbytes 页数：9 Pages

PHI

飞利浦

Silicon Carbide Diode

文件：299.31 Kbytes 页数：11 Pages

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瑞能半导体

Silicon Carbide Diode

文件：289.35 Kbytes 页数：11 Pages

WEEN

瑞能半导体

Silicon Carbide Diode

文件：261.74 Kbytes 页数：10 Pages

WEEN

瑞能半导体

Silicon Carbide diodes

Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package • Highly stable switching performance\n• Extremely fast reverse recovery time\n• Reduced losses in associated MOSFET\n• Reduced cooling requirements\n• RoHS compliant;

WeEn

瑞能半导体

Silicon Carbide diodes

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies\n • Highly stable switching performance\n• Extremely fast reverse recovery time\n• Reduced losses in associated MOSFET\n• Reduced cooling requirements\n• Insulated package rated at 2500V RMS\n;

WeEn

瑞能半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A D2PAK

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瑞能半导体