NXH240B120H3Q1中文资料电源集成模块 (PIM) 3 沟道，1200 V IGBT + SiC 升压，80 A IGBT 和 20 A SiC 二极管数据手册ONSEMI规格书

描述 Description

The NXH240B120H3Q1PG is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 20 A SiC diode, a bypass diode and an IGBT protection diode. The module has a built-in thermistor and has press-fit pins.

特性 Features

• 1200 V Fast Switching IGBTs
• Reduced switching losses from IGBT enables higher fsw and more compact design
• 1200 SiC Diodes
• Reduced switching losses from diode enables higher fsw and more compact design
• Low Vf bypass diodes
• Improved efficiency in bypass mode
• Press-fit pins
• Mounting without soldering

应用 Application

• Solar Inverter Boost Stage
• Decentralized Utility-Scale Solar Inverter
• Commercial String Inverter

简介

NXH240B120H3Q1属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH240B120H3Q1晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。