NXH200T120H3Q2F2STNG数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).

特性 Features

• Low VCE(SAT) fast switching IGBTs combined with SiC diodes in neutral point
• Highest levels of power density and efficiency
• Low thermal resistance baseplate
• High robustness under short term high power conditions
• Solar pins
• Mounting without press-fit tooling
• Thermal Interface Material and Ni-plated DBC

应用 Application

• DC-AC Stage
• Solar Inverter
• UPS
• Energy Storage Systems

简介

NXH200T120H3Q2F2STNG属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH200T120H3Q2F2STNG晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。