NXH160T120L2Q2F2SG中文资料电源集成模块 (PIM)，IGBT 1200 V，160 A 和 600 V，100 A数据手册ONSEMI规格书

描述 Description

The NXH160T120L2Q2F2SG is a power module containing a split T-type neutral point clamped three-level inverter, consisting of two 160A/1200V half-bridge IGBTs with inverse diodes, two neutral point 120A/1200V rectifiers, two 100A/600V neutral point IGBTs with inverse diodes, two half-bridge 60A/600V rectifiers and a negative temperature coefficient thermistor (NTC).

特性 Features

• 600 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 u\u0002J
• Fast switching IGBT with low VCE(SAT) for higher efficiency
• 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 \u0002uJ
• Fast switching IGBT with low VCE(SAT) for higher efficiency
• Baseplate
• Thermal heat spreading
• Solderable Pins
• Easy mounting
• Thermistor
• Temperature detection
• T−type Neutral Point Clamped Three−level Inverter Module

应用 Application

• DC-AC Stage
• Solar Inverter
• UPS

简介

NXH160T120L2Q2F2SG属于分立半导体产品的晶体管-IGBT-模块。由制造生产的NXH160T120L2Q2F2SG晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。