NX8510UD-AZ说明书PDF资料贸易商CEL第3页-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
TPCP8510	文件：218.37 Kbytes Page：5 Pages	TransistorSiliconNPNEpitaxialType High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=120to300(IC=0.1A) •Lowcollector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
TPCP8510	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
TS8510VB	文件：87.85 Kbytes Page：4 Pages	SpecificationofHighPowerIREmittingDiodeChip	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
TS8510VB	文件：89.42 Kbytes Page：4 Pages	SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
TS8510VB	文件：88.89 Kbytes Page：4 Pages	SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
TS8510VB-SD-F	文件：89.42 Kbytes Page：4 Pages	SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
TS8510VB-SD-F	文件：88.89 Kbytes Page：4 Pages	SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
UFR8510	文件：123.36 Kbytes Page：2 Pages	ULTRAFASTRECOVERYRECTIFIER	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
WM8510	文件：571.45 Kbytes Page：56 Pages	MONOCODECWITHSPEAKERDRIVER DESCRIPTION TheWM8510isalowpower,highqualitymonocodecdesignedforVoiceoverInternetProtocol(VoIP)andDigitalTelephones.Thedeviceintegratessupportforonepseudo-differentialandonesingleendedinput(HandsetMicandSpeakerMic)andincludesdriversforspeakersorheadset	WolfsonWolfson Microelectronics plc 欧胜微电子	Wolfson
WM8510GEDS	文件：571.45 Kbytes Page：56 Pages	MONOCODECWITHSPEAKERDRIVER DESCRIPTION TheWM8510isalowpower,highqualitymonocodecdesignedforVoiceoverInternetProtocol(VoIP)andDigitalTelephones.Thedeviceintegratessupportforonepseudo-differentialandonesingleendedinput(HandsetMicandSpeakerMic)andincludesdriversforspeakersorheadset	WolfsonWolfson Microelectronics plc 欧胜微电子	Wolfson

详细参数

型号：
NX8510UD-AZ
制造商：
CEL
制造商全称：
CEL
功能描述：
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	NX8510UD-AZ	CEL	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市科芯源微电子有限公司	NX8510UD其他传感器	NEC原装	25+	TOSA	65428	百分百原装现货实单必成	询价
深圳市粤科源兴科技有限公司	NX8511UD	NEC	13+	TOSA	3196	原装分销	询价
深圳市华斯顿科技有限公司	NX8511UD	NEC原装	25+23+	TOSA	28793	绝对原装正品全新进口深圳现货	询价
深圳市明嘉莱科技有限公司	NX8511UD	NEC	24+	TOSA	880000	明嘉莱只做原装正品现货	询价
深圳市佳杰伟业科技有限公司	NX8511UD	NEC	2406+	TOSA	4860	优势代理渠道,原装现货,可全系列订货	询价

更多NX8510UD-AZ供应商更新时间2025-7-24 15:01:00

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