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NX8313UD

LASER DIODE

1310nmFORLONGHAUL2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8313UDisa1310nmMultipleQuantumWell(MQW)structured DistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly) withInGaAsmonitorPIN-PDinareceptacletypepackage designedforS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8315XC

1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION TheNX8315XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8316XC

1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION TheNX8316XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8340MD-CC

LASER DIODE

1310nmMQW-DFBLASERDIODEMODULEWITHDRIVER FOR10Gb/sAPPLICATIONS DESCRIPTION TheNX8340MD-CCisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodemodulewithaninternal driverIC.Itiscapableoftransmittingupto12kmstandardsinglemode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8341

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8343

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8344

LASER DIODE

1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8346TB

LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX8346TB

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NX8346TS

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
更多NX8供应商 更新时间2025-7-23 15:56:00