LASER DIODE

1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for S

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1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION The NX8315XC is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP transceiver with LC duplex receptacle. FEATURES • Internal op

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1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION The NX8316XC is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP transceiver with LC duplex receptacle. FEATURES • Internal op

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LASER DIODE

1 310 nm MQW-DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8340MD-CC is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with an internal driver IC. It is capable of transmitting up to 12 km standard single mode

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LASER DIODE

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION FEATURES • Internal optical isolator • Optical output power Pf = −2 dBm • Low threshold current lth = 8 mA TYP. @ TC = 25°C • Wide operating temperature range TC = −5 to +85°C • InGaAs monitor PIN-PD

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LASER DIODE

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION FEATURES • Internal optical isolator • Optical output power Pf = −2 dBm • Low threshold current lth = 8 mA TYP. @ TC = 25°C • Wide operating temperature range TC = −5 to +85°C • InGaAs monitor PIN-PD

文件：287.46 Kbytes 页数：14 Pages

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LASER DIODE

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION FEATURES • Internal optical isolator • Optical output power Pf = −2 dBm • Low threshold current lth = 8 mA TYP. @ TC = 25°C • Wide operating temperature range TC = −5 to +85°C • InGaAs monitor PIN-PD

文件：287.46 Kbytes 页数：14 Pages

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LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver. FEATURES • Internal optical isolat

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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver. FEATURES • Internal optical isolat

文件：102.65 Kbytes 页数：9 Pages

NEC

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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver. FEATURES • Internal optical isolator • Optical

文件：89.75 Kbytes 页数：8 Pages

NEC

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