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零件型号	下载订购	功能描述	制造商上传企业	LOGO
NX5321	文件：237.32 Kbytes Page：9 Pages	LASER DIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,FTTH InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NX5321	文件：87 Kbytes Page：7 Pages	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NX5321EH	文件：87 Kbytes Page：7 Pages	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NX5321EH	文件：237.32 Kbytes Page：9 Pages	LASER DIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,FTTH InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NX5321EK	文件：87 Kbytes Page：7 Pages	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NX5321EK	文件：237.32 Kbytes Page：9 Pages	LASER DIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,FTTH InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5321Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NX5322	文件：245 Kbytes Page：9 Pages	LASER DIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS •S	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NX5322	文件：94.65 Kbytes Page：7 Pages	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NX5322EH	文件：94.65 Kbytes Page：7 Pages	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NX5322EH	文件：245 Kbytes Page：9 Pages	LASER DIODE 1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS •S	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

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技术参数

Package name：
DFN0606-3
Product status：
Production
Channel type：
N
Nr of transistors：
1
VDS [max] (V)：
50
VGS [max] (V)：
8
RDSon [max] @ VGS = 4.5 V (mΩ)：
2800
RDSon [max] @ VGS = 2.5 V (mΩ)：
3000
integrated gate-source ESD protection diodes：
Y
VESD HBM (V)：
2000
Tj [max] (°C)：
150
ID [max] (A)：
0.35
QGD [typ] (nC)：
0.11
QG(tot) [typ] @ VGS = 4.5 V (nC)：
0.46999997
Ptot [max] (W)：
0.38
VGSth [typ] (V)：
0.7
Automotive qualified：
N
Ciss [typ] (pF)：
29.999998
Coss [typ] (pF)：
2.5
Release date：
2020-09-01

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	NX5DV715HF	恩XP		QFN32	2170	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	NX5032SG/40MHZ/10PPM/8PF	XTAL	24+	SMD4	172952		询价
深圳市益百分电子有限公司	NX5032SD-20MHZ-STD-CSY-1	NDK	11+	SMD	2000	原装现货价格有优势量大可以发货	询价
齐创科技(上海,北京,青岛)有限公司	NX5306EK	原厂正品	23+	TO72	5000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	NX5DV715HF	恩XP	2020+	QFN	100	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市粤科源兴科技有限公司	NX5310EK	NEC	13+		19748	原装分销	询价
深圳市弘为电子有限公司	NX5032GA20.000MHZ	DNK	24+	SC70-5	920	原装现货假一罚十	询价
深圳市恒创达实业有限公司	NX5DV715HF	恩XP	17+	HWQFN-32	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	NX5DV715HF	恩XP	2016+	QFN-32	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	NX5DV330PW	恩XP	24+	TSSOP16	5000	全现原装公司现货	询价

更多NX5供应商更新时间2025-7-29 16:20:00

技术参数

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