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NX5322

LASER DIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS •S

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX5322

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NX5322

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

CEL

California Eastern Labs

NX5322EH

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NX5322EH

LASER DIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS •S

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX5322EK

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcurrentlth=7mA •Differential

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NX5322EK

LASER DIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS •S

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NX5322EH-AZ

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

CEL

California Eastern Labs

NX5322EK-AZ

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

CEL

California Eastern Labs

详细参数

  • 型号:

    NX5322

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

供应商型号品牌批号封装库存备注价格
NEC
24+
DIP
5000
全现原装公司现货
询价
NEC
08+PBF
DIP
115
现货
询价
NEC
23+
DIP
50000
全新原装正品现货,支持订货
询价
NEC
23+
DIP
50000
全新原装正品现货,支持订货
询价
NEC
13+
DIP
2695
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEC
2023+
DIP
8800
正品渠道现货 终端可提供BOM表配单。
询价
NDK
6000
面议
19
DIP/SMD
询价
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
DIODES/美台
23+
SEAM5032
12000
原装正品假一罚百!可开增票!
询价
DIODES/美台
22
SEAM5032
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多NX5322供应商 更新时间2025-6-7 10:22:00