NX5323EH资料datasheet下载贸易商瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NX5323EH	文件：89.4 Kbytes Page：7 Pages	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 7 mA • Differential Effici 文件：89.4 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NX5323EH	文件：241.98 Kbytes Page：9 Pages	LASER DIODE 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON 文件：241.98 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
NX5323EH	文件：173.6 Kbytes Page：7 Pages	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE 文件：173.6 Kbytes 页数：7 Pages	CEL	CEL
NX5323EH	文件：300 bytes Page：1 Pages	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE	CEL	CEL
NX5323EH	文件：300 bytes Page：1 Pages	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE	Renesas 瑞萨	Renesas

更多NX5323EH供应商更新时间2026-2-4 10:12:00