MOSFET - Power, Single N-Channel 60 V, 5.3 m, 89 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：262.18 Kbytes 页数：6 Pages

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丝印：005N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 5.3 m, 89 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：262.18 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel

MOSFET – Power, Single, N-Channel, 60 V, 5.3 mΩ, 109 A • Small Footprint (3.3 x 3.3mm)\n• Low RDS(on)\n• Low Capacitance\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体