NVTYS010N06CL

MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS010N06CL

60 N-Channel Enhancement Mode Power MOSFET

NVTYS010N06CLTWG

MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

IPB010N06N

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching

IPB010N06N

OptiMOSTMPower-Transistor,60V

IPB010N06N

NewOptiMOS??40Vand60V