丝印：30NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS030N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：281.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS030N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fre

文件：281.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Nch 60V 3A Power MOSFET

文件：592.51 Kbytes 页数：12 Pages

ROHM

罗姆

4V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：223.57 Kbytes 页数：5 Pages

ROHM

罗姆