MOSFET ??Power, Single N-Channel 80 V, 2.1 m, 203 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.14 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H800N；Package：DFN5；MOSFET ??Power, Single N-Channel 80 V, 2.1 m, 203 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.14 Kbytes 页数：7 Pages

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安森美半导体

丝印：800NWF；Package：DFN5；MOSFET ??Power, Single N-Channel 80 V, 2.1 m, 203 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.14 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET Single N?묬hannel, 80 V, 1.9 m, 224 A

文件：204.49 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H800L；Package：DFN5；Power MOSFET Single N?묬hannel, 80 V, 1.9 m, 224 A

文件：204.49 Kbytes 页数：7 Pages

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安森美半导体

丝印：800LWF；Package：DFN5；Power MOSFET Single N?묬hannel, 80 V, 1.9 m, 224 A

文件：204.49 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 80V, 203A, 2.1mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• NVMFS6H800NWF − Wettable Flank Option\n• Enhanced OpticalInspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified\n• RoHS Compliant;

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安森美半导体

单 N 沟道，功率 MOSFET，80V，224A，1.8mΩ

适用于紧凑和高效设计的汽车用功率 MOSFET，安装在 5x6mm 扁平引线封装中且具有较高的热性能。可用于增强光学检测的可润湿侧翼选项。AEC-Q101 认证 MOSFET 且具备生产件批准程序(PPAP) 功能，适用于汽车应用。 • Small Footprint (5x6 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• NVMFS5C410NLWF − Wettable Flank Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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安森美半导体