MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：185.44 Kbytes 页数：8 Pages

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安森美半导体

丝印：5H663L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：185.44 Kbytes 页数：8 Pages

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安森美半导体

丝印：663LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：185.44 Kbytes 页数：8 Pages

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安森美半导体

单 N 沟道，功率 MOSFET，60V，67A，7.2mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm) for Compact Design\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

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安森美半导体