丝印：30DN6C；Package：SO-8FL；MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD030N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Ha

文件：253.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD030N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Ha

文件：253.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

DFN-8

ON

上传：深圳庞田科技有限公司

DFN

ON

上传：深圳市粤骏腾电子科技有限公司