Trench Power MOSFET

文件：73.5 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Trench Power MOSFET

文件：73.5 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

单 P 沟道 ESD 保护的沟槽功率 MOSFET -12V，-3.3A，60mΩ

Automotive Power MOSFET ideal for low power applications. Power MOSFET -12V, -3.3A, 60 mΩ, Single P-Channel, SC-88 with ESD Protection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Leading Trench Technology for Low RDS(on) Extending Battery Life\n• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)\n• Gate Diodes for ESD Protection\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体

Ratiometric Linear Hall-effect Sensor

Description: Each ratiometric linear Hall-effect sensor contains a monolithic integrated circuit on a single chip. This circuit incorporates a quadratic Hall sensing element, which minimizes the effects of mechanical and thermal stress on the Hall element and temperature compensating circuitry to

文件：517.039 Kbytes 页数：4 Pages

Optek

Ra ti omet ric Lin ear Hall Ef fect Sen sor

[Optek] Description The ratiometric linear Hall effect sensor each contain a monolithic integrated circuit on a single chip. The circuit incorporates a quadratic Hall sensing element which minimizes the effects of mechanical and thermal stress on the Hall element and temperature compensating cir

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ETCList of Unclassifed Manufacturers

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Ratiometric Linear Hall-effect Sensor

Description: Each ratiometric linear Hall-effect sensor contains a monolithic integrated circuit on a single chip. This circuit incorporates a quadratic Hall sensing element, which minimizes the effects of mechanical and thermal stress on the Hall element and temperature compensating circuitry to

文件：517.039 Kbytes 页数：4 Pages

Optek