NVH4L023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features TypicalRDS(on)=23m@VGS=18V UltraLowGateCharge(QG(tot)=69nC) HighSpeedSwitchingwithLowCapacitance(Coss=153pF) 100AvalancheTested AEC−Q101QualifiedandPPAPCapable ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(

NVH4L023N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L; • New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses\n• Qualified for Automotive According to AEC−Q101\n• 15V to 18V Gate Drive\n• TO-247-4L Package with Kelvin source configuration\n• Devices are Pb−Free and are RoHS Compliant\n\n;

EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

NTH4L023N065M3S

SiliconCarbide(SiC)MOSFET-EliteSiC,23mohm,650V,M3S,TO-247-4L

Features TypicalRDS(on)=23m@VGS=18V UltraLowGateCharge(QG(tot)=69nC) HighSpeedSwitchingwithLowCapacitance(Coss=153pF) 100AvalancheTested ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onsecondlevelinterconnection) Appli