Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features  Typical RDS(on) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100 Avalanche Tested  AEC−Q101 Qualified and PPAP Capable  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (

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ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L

EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency • New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses\n• Qualified for Automotive According to AEC−Q101\n• 15V to 18V Gate Drive\n• TO-247-4L Package with Kelvin source configuration\n• Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features  Typical RDS(on) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100 Avalanche Tested  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Appli

文件：477.82 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

ON/安森美
SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

ON/安森美
SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司