Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Qualified for Automotive According to AEC−Q101\n• Automotive grade\n• 650V rated\n• Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Devices are RoHS Compliant;

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

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Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：356.49 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：357.1 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

文件：337.96 Kbytes 页数：9 Pages

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安森美半导体