MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

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Silicon Carbide (SiC) MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology\nthat provide superior switching performance and higher reliability\ncompared to Silicon. In addition, the low ON resistance and compact\nchip size ensure low capacitance and gate charge. Consequently,\nsystem benefits include highest eff • 1200 V\n• TJ= 175°C\n• High Speed Switching with Low Capacitance\n• 100% UIL Tested\n• Qualified for Automotive According to AEC−Q101;

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MOSFET - SiC Power, Single N-Channel

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interc

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MOSFET - SiC Power, Single N-Channel

文件：297 Kbytes 页数：7 Pages

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