Single N-Channel, 150 V, 4.4 mΩ, 187 A

Automotive Power MOSFET in a TOLL package for efficient designs with high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified\n• RoHS Compliant\n• Minimize Switching Noise/EMI;

ONSEMI

安森美半导体

MOSFET ??Single N-Channel

文件：301.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Single N-Channel 150 V, 4.4 m, 187 A

文件：300.48 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=187A@ TC=25℃ ·Drain Source Voltage- VDSS= 150V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Pow

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ISC

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