NVBLS1D7N10MC

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVBLS1D7N10MC

N-Channel PowerTrench® MOSFET, 100V, 300A, 1.5mΩ; • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant\n• Minimize Switching Noise/EMI\n• AEC Q101- Qualified and PPAP Capable\n• Automotive Qualified\n;

Automotive Power MOSFET in a TOLL package for efficient designs with high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

NVBLS1D7N10MCTXG

丝印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NTBLS1D7N10MC

MOSFET-Power,SingleN-Channel,TOLL100V,1.8m,272A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NTBLS1D7N10MCTXG

MOSFET-Power,SingleN-Channel,TOLL100V,1.8m,272A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant