MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：271.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：271.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench® MOSFET, 100V, 300A, 1.5mΩ

Automotive Power MOSFET in a TOLL package for efficient designs with high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant\n• Minimize Switching Noise/EMI\n• AEC Q101- Qualified and PPAP Capable\n• Automotive Qualified;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体