MOSFET ??Power, Single N-Channel 30 V, 0.52 m

Features • Typical RDS(on) = 0.43 m at VGS = 10 V • Typical Qg(tot) = 139 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant

文件：112.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, Logic Level, 30V, 0.52mΩ, Bare Die

NVCW3SS0D5N03CLA is a 30 V 0.52 mΩ Automotive Power MOSFET Bare die with a die size of 3.683 mm x 3.000 mm. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified;

ONSEMI

安森美半导体

TO-252

VB

上传：深圳市恒佳微电子有限公司

安森美半导体

上传：深圳市微纪元电子有限公司

TO-252

ON

上传：深圳市鼎欣微电子有限公司