Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second l

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安森美半导体

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L

文件：244.91 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Qualified for Automotive According to AEC−Q101\n• Automotive Grade\n• 1200V rated\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Devices are RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second l

文件：327.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体