MOSFET - Power, N-Channel, SUPERFET® III, Automotive, Easy-drive, 650 V, 24 A, 125 mΩ

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • Best in Class body diode\n• High System Reliability\n• Low RDS (ON) / Same Packages\n• Ease of use for fast design-in\n• Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS\n• Low EMI\n• Internal Zener / 650V BVdss\n• Gull-wings to improve Board Level Reliability results and Automotive Qualifie;

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丝印：NVB125N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：257.01 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.04 Kbytes 页数：2 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 24 A, 125 m

General Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

文件：494.91 Kbytes 页数：10 Pages

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