Description

The NV25010/20/40 are a EEPROM Serial 1/2/4−Kb SPI

Automotive Grade 1 devices internally organized as

128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and

support the Serial Peripheral Interface (SPI) protocol. The device is

enabled through a Chip Select (CS) input. In addition, the required bus

signals are a clock input (SCK), data input (SI) and data output (SO)

lines. The HOLD input may be used to pause any serial

communication with the NV25010/20/40 device. These devices

feature software and hardware write protection, including partial as

well as full array protection.

Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• 10 MHz SPI Compatible

• 1.8 V to 5.5 V Supply Voltage Range

• SPI Modes (0,0) & (1,1)

• 16−byte Page Write Buffer

• Self−timed Write Cycle

• Hardware and Software Protection

• Block Write Protection

− Protect 1/4, 1/2 or Entire EEPROM Array

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Wettable Flank UDFN 8−pad Package

• These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant

NV25040MUW3VTBG属于集成电路（IC） > 存储器。安森美半导体公司制造生产的NV25040MUW3VTBG存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。