首页 >NV-ISD9160>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NV-ISD9160 | 包装：盒 功能：录音/回放 类别：开发板，套件，编程器 评估和演示板及套件 描述：ISD9160 IOT EVAL MODULE KITS FOR | NuvotonNuvoton Technology Corporation 新唐新唐科技股份有限公司 | Nuvoton | |
SimplePCIBridging | OXFORD OXFORD electrical power | OXFORD | ||
Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
RFFilter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA Electronics, Inc. | PCA | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
产品属性
- 产品编号：
NV-ISD9160
- 制造商：
Nuvoton Technology Corporation
- 类别：
开发板，套件，编程器 > 评估和演示板及套件
- 系列：
ChipCorder®
- 包装：
盒
- 类型：
音频
- 功能：
录音/回放
- 使用的 IC/零件：
ISD9160
- 所含物品：
板
- 描述：
ISD9160 IOT EVAL MODULE KITS FOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
NVIS |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
SMC |
新 |
83 |
全新原装 货期两周 |
询价 | |||
FAIRCHILD/仙童 |
SC-88-6 / SC-70-6 / SOT-363-6 |
41186 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
SOT-363 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ON |
23+ |
SOT-363-6 |
42300 |
原装正品现货 |
询价 | ||
ON/安森美 |
2102+ |
SOT-363 |
9854 |
只做原装正品现货,或订货假一赔十! |
询价 | ||
ON/安森美 |
22+ |
SOT-363 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ON/安森美 |
21+ |
SOT-363 |
60000 |
进口原装现货 |
询价 |
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