MOSFET ??Power, Single, N-Channel 40 V, 4.8 m, 74 A

文件：207.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：60NL；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 4.8 m, 74 A

文件：207.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，74A，4.8mΩ

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3x3 mm)\n• Low On-Resistance\n• Low Capacitance\n• NTTFS5C453NLWF − Wettable Flanks Product\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 70 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：232.9 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.32 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, Single N-Channel 40 V, 4.6 m, 73 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体