丝印：60NL；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 4.8 m, 74 A

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安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 70 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：232.9 Kbytes 页数：7 Pages

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 40 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.32 Kbytes 页数：2 Pages

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无锡固电

MOSFET ??Power, Single N-Channel 40 V, 4.6 m, 73 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：233.93 Kbytes 页数：7 Pages

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安森美半导体