Power MOSFET 40 V, 5.6 m, 69 A, Single N?묬hannel

文件：201.24 Kbytes 页数：7 Pages

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安森美半导体

丝印：05NC；Package：WDFN8；Power MOSFET 40 V, 5.6 m, 69 A, Single N?묬hannel

文件：201.24 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET, Single N-Channel, 40 V, 5.6 mOhms, 69 A

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. • Small Footprint (3x3 mm)\n• Compact Design\n• Low On-Resistance\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体