MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 77 A

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丝印：04NC；Package：WDFN8；MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 77 A

文件：212.91 Kbytes 页数：7 Pages

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Single N-Channel Power MOSFET 40V, 77A, 4.9mΩ

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3x3 mm)\n• Compact Design\n• Low On-Resistance\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• NTTFS5C453NLWF − Wettable Flanks Product\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for Automotive Applications\n• Ro;

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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 4.7 m, 66 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) for Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Batt

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MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：216.95 Kbytes 页数：7 Pages

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安森美半导体

MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：216.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体