MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：216.95 Kbytes 页数：7 Pages

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安森美半导体

丝印：04NC；Package：WDFN8；MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：216.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，77A，4.9mΩ

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3x3 mm)\n• Compact Design\n• Low On-Resistance\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• NVTFS5C453NLWF − Wettable Flanks Product\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for Automotive Applications\n• Ro;

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：216.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 4.9 m, 78 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.11 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 40 V, 4.3 m, 85 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：337.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体