MOSFET – Power, Single P-Channel, Trench, SOT-23 -20 V

Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices

文件：219.5 Kbytes 页数：6 Pages

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：464.92 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：476.3 Kbytes 页数：9 Pages

VBSEMI

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MOSFET – Power, Single P-Channel, Trench, SOT-23 -20 V

Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices

文件：219.5 Kbytes 页数：6 Pages

ONSEMI

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Trench Power MOSFET

文件：81.47 Kbytes 页数：5 Pages

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单 P 沟道沟槽功率 MOSFET -20V，-3.2A，85mΩ

Automotive Power MOSFET ideal for low power applications. -20V, -3.2A, 85 mOhm, Single P-Channel, SOT23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Leading -20 V Trench for Low RDS(on)\n• -1.8 V Rated for Low Voltage Gate Drive\n• SOT-23 Surface Mount for Small Footprint\n• Qualified to AEC Q101\n• PPAP Capable\n• RoHS Compliant;

ONSEMI

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