Power MOSFET

文件：97.86 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：1.02567 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

单 N 沟道功率 MOSFET 30V，2.5A，110mΩ

This 30 V N-Channel Small Signal MOSFET is designed with ON Semiconductors leading Planar Technology for Low Gate Charge resulting in a fast switching device. This performance is particularly suited for DC to DC conversion or low side power switching applications. The small SOT-23 (3.0 x 3.0 mm) pac • Leading Planar Technolgy for Low Gate Charge/Fast Switching\n• 4.5 V Rated for Low Voltage Gate Drive\n• SOT-23 Surface Mount for Small Footprint (3x3mm)\n• RoHS Compliant;

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 30V 2.5A SOT23

ONSEMI

安森美半导体