MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 11 A, 450 mΩ, TO-220F

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to • 900 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 19.3 nC)\n• Lower switching loss\n• Low Stored Energy in Output Capacitance (Eoss = 2.2 µJ @ 400 V)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs osc;

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丝印：NTPF450N80S3Z；Package：TO-220F；MOSFET ??Power,N-Channel, SUPERFET III 800 V, 450 m, 11 A

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