Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 24 A, 125 mΩ, TO-220F

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 44 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 379 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching l;

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丝印：T125N65S3H；Package：TO-220；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 125 m, 24 A

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MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：257.01 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.04 Kbytes 页数：2 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 24 A, 125 m

General Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

文件：494.91 Kbytes 页数：10 Pages

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