STP60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

STP60N06FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

SUP60N06

N-Channel60-V(D-S),175CMOSFET

N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET®PowerMOSFETs ProductSummary   V(BR)DSS  60V   rDS(on)   0.018Ω   ID        60A

SW60N06T

N-channelTO-220MOSFET

TSM60N06

60VN-ChannelPowerMOSFET

TSM60N06

60VN-ChannelPowerMOSFET

TSM60N06CP

N-ChannelMOSFETusesadvancedtrenchtechnology

TSM60N06CP

60VN-ChannelPowerMOSFET

TSM60N06CPROG

60VN-ChannelPowerMOSFET

UTT60N06

N-CHANNELENHANCEMENTMODEPOWERMOSFET