首页 >UTT60N06>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

UTT60N06

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:366.56 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06

Trench Power MOSFET  (N-CH)

The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. • RDS(ON) = 18mΩ @VGS = 10 V \n• Fast switching capability \n• Avalanche energy Specified;

UTC

友顺

UTT60N06_15

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06G-TA3-T

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06G-TN3-R

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:366.56 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06G-TN3-R

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06G-TQ2-R

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06G-TQ2-T

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06L-TA3-T

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:386.47 Kbytes 页数:8 Pages

UTC

友顺

UTT60N06L-TN3-R

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:366.56 Kbytes 页数:8 Pages

UTC

友顺

技术参数

  • VGS(±V):

    ±20

  • ID(A):

    60

  • RDS(ON)MAX.(mΩ)atVGS=10V:

    18

  • CISSTYP.(pF):

    2000

  • COSSTYP.(pF):

    400

  • CRSSTYP.(pF):

    115

  • QgTYP.(nC):

    39

  • QgsTYP.(nC):

    12

  • QgdTYP.(nC):

    10

  • VGS(th)(V)MIN.:

    2

  • VGS(th)(V)MAX.:

    4

  • Package:

    TO-252_TO-220_TO-220F_TO-263_PDFN5×6

供应商型号品牌批号封装库存备注价格
HAMOS/汉姆
23+
TO-252
50000
全新原装正品现货,支持订货
询价
UTC/友顺
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
HAMOS/汉姆
25+
TO-252
90000
全新原装现货
询价
UTC
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
询价
UTC/友顺
2022+
TO-220
32500
原厂代理 终端免费提供样品
询价
UTC/友顺
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
询价
UTC/友顺
20+
TO-220
32500
现货很近!原厂很远!只做原装
询价
NK/南科功率
2025+
TO-252-L
986966
国产
询价
UTC/友顺
22+
TO-252
20000
只做原装
询价
更多UTT60N06供应商 更新时间2026-4-19 11:00:00