丝印：NTP055N65S3H；Package：TO-220-3LD；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 55 m, 47 A

文件：319.83 Kbytes 页数：10 Pages

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安森美半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 47A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V APPLICATIONS · UPS / Solar · EV Charger · Industrial Power Supplies

文件：398.21 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 47 A, 55 mΩ, TO-220

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 96 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 880 pF)\n• Low switching loss\n• Typ. RDS(on) = 45 m Ω\n• Low conduction loss\n• 100% Avalanche T;

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NF/耐福
QFN40

NF/耐福

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SOT23

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