NTMT061N60S5F中文资料Power MOSFET, N-Channel,  SUPERFET® V, FRFET®, 600 V, 61 mΩ, 41 A, Power88数据手册ONSEMI规格书

描述 Description

The SUPERFET V MOSFET FRFET series, optimized reverse recovery performance of body diode, can remove additional component and improve system reliability for soft switching applications such as PSFB and LLC. The Power88 package which is an ultra−slim SMD package offers excellent switching performance by providing kelvin source configuration and lower parasitic source inductance.

特性 Features

• 650 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• Ultra Low Gate Charge (Typ. Qg = 76 nC)
• Lower switching loss
• Low Energy Related Output Capacitance (Typ. Coss(er.) = 103 pF)
• Lower switching loss
• Leadless Ultra-thin SMD package
• High power density
• Kelvin Source Configuration
• Low gate noise and switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Moisture Sensitivity Level 1 guarantee
• High reliability in humid ambient condition
• Typ. RDS(on) = 48.8 mΩ
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• LED Lighting
• Solar / UPS